unisonic technologies co., ltd he8551 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r201-047.c low voltage high current small signal pnp transistor ? description the utc he855 1 is a low voltage high current small signal pnp transistor, designed for class b push-pull 2w audio amplifier for portable radio and general purpose applications. ? features * collector current up to 1.5a * collector-emitter voltage up to 25 v * complimentary to utc he8051 to-92 1 to-92nl 1 lead-free: he8551l halogen-free: he8551g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing he8551-x-t92-b he8551l-x-t92-b he 8551g-x-t92-b to-92 e b c tape box he8551-x-t92-k he8551l-x-t92-k he 8551g-x-t92-k to-92 e b c bulk he8551-x-t9n-b he8551l-x-t9n-b he8551g-x-t9n-b to-92nl e b c tape box he8551-x-t9n-k he8551l-x-t9n-k he8551g-x-t9n-k to-92nl e b c bulk
he8551 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-047.c ? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -6 v collector dissipation (ta=25 ) p c 1 w collector current i c -1.5 a junction temperature t j +150 storage temperature t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -40 v collector-emitter breakdown voltage bv ceo i c =-2ma, i b =0 -25 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -6 v collector cut-off current i cbo v cb =-35v, i e =0 -100 na emitter cut-off current i ebo v eb =-6v, i c =0 -100 na h fe1 v ce =-1v, i c =-5ma 45 170 h fe2 v ce =-1v, i c =-100ma 85 160 500 dc current gain h fe3 v ce =-1v, i c =-800ma 40 80 collector-emitter satu ration voltage v ce(sat) i c =-800ma, i b =-80ma -0.28 -0.5 v base-emitter satura tion voltage v be(sat) i c =-800ma, i b =-80ma -0.98 -1.2 v base-emitter voltage v be v ce =-1v, i c =-10ma -0.66 -1.0 v current gain bandwidth product f t v ce =-10v, i c =-50ma 100 190 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 9.0 pf ? classification of h fe2 rank c d e range 120-200 160-300 250-500
he8551 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-047.c ? typical characteristics fig. 1 static characteristics collector-emitter voltage, v ce ( v) -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -0.1 -0.2 -0.3 -0.4 -0.5 fig. 2 dc current gain collector current, i c (ma) v ce =-1v 10 0 10 1 10 2 10 3 -10 -1 -10 0 -10 1 -10 2 -10 3 i b =-3.0ma i b =-2.5ma i b =-2.0ma i b =-1.0ma i b =-1.5ma i b =-0.5ma saturation voltage, v be & v ce (mv) collector current, i c (ma) current gain-bandwidth product, f t (mhz) capacitance, c ob (pf)
he8551 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-047.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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